advanced power n-channel enhancement mode electronics corp. power mosfet 100% avalanche test bv dss 650v fast switching r ds(on) 0.75 simple drive requirement i d 9a rohs compliant description absolute maximum ratings symbol units v ds v v gs gate-source voltage v i d @t c =25 continuous drain current, v gs @ 10v a i d @t c =100 continuous drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w w/ e as single pulse avalanche energy 2 mj i ar avalanche current a e ar repetitive avalanche energy mj t stg t j operating junction temperature range thermal data symbol value unit rthj-c maximum thermal resistance, junction-case 0.8 /w rthj-a maximum thermal resistance, junction-ambient 62 /w data & specifications subject to change without notice linear derating factor drain-source voltage parameter -55 to 150 parameter storage temperature range -55 to 150 1 9 9 40 156 9 5 305 1.25 200804084 ap09n70p-a 30 rating 650 rohs-compliant product g d s g d s g d s to-220 the to-220 package is widely preferred for all commercial-industrial applications. the device is suited for dc-dc ,ac-dc converters for power applications.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 650 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : , i d =1ma - 0.6 - v/ : r ds(on) static drain-source on-resistance 3 v gs =10v, i d =4.5a - - 0.75 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =4.5a - 4.5 - s i dss drain-source leakage current v ds =600v, v gs =0v - - 10 ua drain-source leakage current (t j =150 o c) v ds =480v , v gs =0v - - 100 ua i gss gate-source leakage v gs =30v - - 100 na q g total gate charge 3 i d =9a - 44 - nc q gs gate-source charge v ds =480v - 11 - nc q gd gate-drain ("miller") charge v gs =10v - 12 - nc t d(on) turn-on delay time 3 v dd =300v - 19 - ns t r rise time i d =9a - 21 - ns t d(off) turn-off delay time r g =10 ? v gs =10v - 56 - ns t f fall time r d =34 -24- ns c iss input capacitance v gs =0v - 2660 - pf c oss output capacitance v ds =25v - 170 - pf c rss reverse transfer capacitance f=1.0mhz - 10 - pf source-drain diode symbol parameter test conditions min. typ. max. units i s continuous source current ( body diode ) v d =v g =0v , v s =1.5v - - 9 a i sm pulsed source current ( body diode ) 1 --40 a v sd forward on voltage 3 t j =25 : , i s =9a, v gs =0v - - 1.5 v notes: 1.pulse width limited by max. junction temperature. 2.starting t j =25 o c , v dd =50v , l=6.8mh , r g =25 , i as =9a. 3.pulse test this product is an electrostatic sensitive, please handle with caution. device or system are not authorized. this product has been qualified for consumer market. applications or uses as criterial component in life support 2 ap09n70p-a
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 ap09n70p-a 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v) 0 2 4 6 8 10 036912 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 6.0v 5.0v 4.5v 4.0v v g = 3 .5 v 0 1 2 3 -50 0 50 100 150 t j , junction temperature ( o c ) normalized r ds(on) i d =4.5a v g =10v 0 2 4 6 8 10 0 5 10 15 20 25 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 6.0v 5.0v 4.5v 4.0v v g = 3 .5 v 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j = 150 o c t j = 25 o c 1 2 3 4 5 -50 0 50 100 150 t j , junction temperature ( o c) v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 ap09n70p-a 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 1 10 100 1000 10000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 10us 100us 1ms 10ms 100ms 0 4 8 12 16 0204060 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =9a v ds =320v v ds =400v v ds =480v 1 100 10000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge
package outline : to-220 millimeters min nom max a 4.25 4.48 4.70 b 0.65 0.80 0.90 b1 1.15 1.38 1.60 c 0.40 0.50 0.60 c1 1.00 1.20 1.40 e 9.70 10.00 10.40 e1 --- --- 11.50 e ---- 2.54 ---- l 12.70 13.60 14.50 l1 2.60 2.80 3.00 l2 1.00 1.40 1.80 l3 2.6 3.10 3.6 l4 14.70 15.50 16 l5 6.30 6.50 6.70 3.50 3.60 3.70 d 8.40 8.90 9.40 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-220 symbols e b b1 e d l3 l4 l1 l2 a c1 c l package code part number date code (ywwsss) y last digit of the year ww week sss se q uence 09n70p ywwsss logo l5 option e1 a 5
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